5:00pm - 5:25pmModel-based Development to Improve Electrical and Thermal Performances for Robust Si Power MOSFETs Using Embedded Die Packaging Technology
Kentaro Mori, Kohei Oasa, Hitoshi Imi, Yutaro Hayashi, Tatsuya Ohguro, Tatsuya Nishiwaki, Fumiyoshi Kawashiro
Toshiba Electronic Devices & Storage Corporation, Japan
5:25pm - 5:50pmResearch on Ultra-compact 3D SiC Power Module for EVs with Double Layer Cooling Technology
Keita Suzuki1, Takumi Yumoto2, Koji Bando2, Tetsuo Endoh1, Yoshikazu Takahashi1
1Tohoku University, Tohoku, Japan; 2Shinko Electric Industries Co, LTD. Japan
5:50pm - 6:15pmAn Introduction to Wire-bondless Discrete GaN Power Packages with Top-Side Cu Sinterconnects®
Kaneeze Noorul Ain1,2, Guo Qi Zhang2, Augusto Rodrigues1, Md Nazmul Hasan1, Karen Geens3, Urmimala Chatterjee3, Ali Roshanghias1, Dominik Holzmann1
1Silicon Austria Labs (SAL), Villach, Austria; 2Delft University of Technology (TUD), Delft, The Netherlands; 3Interuniversity Microelectronics Centre (IMEC), Loewen, Belgium
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