Session | ||
Power1_Electronics Measurement and Simulation
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Presentations | ||
2:40pm - 3:05pm
Dynamic Calibration of Junction Temperature of SiC MOSFETs for Power Cycling 1Fraunhofer IISB, Erlangen, Germany; 2SCHLETZ GmbH, Amberg, Germany; 3Friedrich-Alexander-University of Erlangen-Nürnberg, Erlangen, Germany 3:05pm - 3:30pm
Contact Thermography – New Findings, New Ideas TU Dresden, Dresden, Germany 3:30pm - 3:55pm
Abrasion Characterization of Graphene-enhanced Thermal Interface Materials for Electronics Thermal Management Applications 1Smart High Tech AB, Goeteborg, Sweden; 2Chalmers University of Technology, Goeteborg, Sweden |